| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2N6073AG ON |
ON|ON Semiconductor |
N/a |
10000 |
 |
|
2N6073B ,TRIACs 4 AMPERES RMS 200 thru 600 VOLTSTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit*Thermal Resistance, Junction to Case R 3.5 °C ..
2N6074 ,Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V.MOTOROLA SC 4Hyir(yI)ES/0PT()iySensitive Gate TriacsSilicon Bidirectional Thyristors. . . designed ..
2N6075 ,Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.MOTOROLA SC 4Hyir(yI)ES/0PT()iySensitive Gate TriacsSilicon Bidirectional Thyristors. . . designed ..
2N6075 ,Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.THERMAL CHARACTERISTICSiB52200F006l. Mounting torque in excess of 6 in, lb. does not appreciably lo ..
2N6075 ,Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.MAXIMUM RATINGS"ru-ar-tg2N6071,A,Bthru2N6075,A,BTRIACs4 AMPERES RMS200 thru 600 VOLTSMT1CASE 77-05( ..
2SC2983 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier ApplicationsApplications High transition frequency: f = 100 MHz (typ.) T Complementary to 2SA1225 Maxi ..
2SC2983 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier
2SC2996 ,Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, Local, IF High Frequency Amplifier ApplicationsApplications High stability oscillation voltage on FM local oscillator Recommend FM/AM RF, ..
