| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2N6070B |
MOTO|Motorola |
N/a |
42 |
 |
|
2N6071 ,TRIACs 4 AMPERES RMS 200 thru 600 VOLTSTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit*Thermal Resistance, Junction to Case R 3.5 °C ..
2N6071A ,TRIACs 4 AMPERES RMS 200 thru 600 VOLTS**Order this documentSEMICONDUCTOR TECHNICAL DATAby 2N6071/D** * *Silicon Bidirectional Thyristors* ..
2N6071A ,TRIACs 4 AMPERES RMS 200 thru 600 VOLTSMAXIMUM RATINGSRating Symbol Value Unit*Operating Junction Temperature Range T –40 to +110 °CJ*Stor ..
2N6071A. ,TRIACs 4 AMPERES RMS 200 thru 600 VOLTShttp://onsemi.com32N6071A/B SeriesVoltage Current Characteristic of Triacs(Bidirectional Device)+ C ..
2N6071B ,TRIACs 4 AMPERES RMS 200 thru 600 VOLTS**Order this documentSEMICONDUCTOR TECHNICAL DATAby 2N6071/D** * *Silicon Bidirectional Thyristors* ..
2SC2959 ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SC2958, 2959NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY ..
2SC2982 ,Transistor Silicon NPN Epitaxial Type (PCT process) Storobo Flash Applications Medium Power Amplifier ApplicationsApplications High DC current gain and excellent linearity : h = 140 to 600 (V = 1 V, I = 0.5 ..
2SC2983 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier ApplicationsApplications High transition frequency: f = 100 MHz (typ.) T Complementary to 2SA1225 Maxi ..
