| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2N6027G |
ON|ON Semiconductor |
N/a |
32500 |
 |
Programmable Unijunction Transistor |
2N6027K
2N6028 MICRO,Electrical Characteristicscharacteristics testingR1 and R2(also see Figure 2)Figure 1. Electrical Characterization+VB–+VAdjust I (SENSE)100kPfor 100 ..
2N6027G , Programmable Unijunction Transistor
2N6028 ,Leaded Thyristor UJTTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 75 °C/W ..
2N6028RLRA ,Programmable UJT22N6027, 2N6028I+VAB VR1 R2 AI R =A GAR1 + R2R2G +–VR1 PV– V = V SS BR1 + R2R V = V – VG T P SVVAKR ..
2N6034 ,Leaded Power Transistor DarlingtonABSOLUTE MAXIMUM RATINGS
PNP 2N60342N6035 2N6036 .
Symbol Parameter NPN 2N60372N60382N6039 Unit
..
2N6035 ,Leaded Power Transistor Darlington
2SC2901 ,NPN SILICON TRANSISTORFEATURES 0 High Frequency Current Gain.
0 High Speed Switching.
. Small Output Capacitance.
AB ..
2SC2904 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC2909 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
