| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2N6.1TFR |
TOSHIBA |TOSHIBA |
N/a |
3300 |
 |
|
2N6027 ,Leaded Thyristor PUTMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit12*Power Dissipation P 30 ..
2N6027G , Programmable Unijunction Transistor
2N6028 ,Leaded Thyristor UJTTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 75 °C/W ..
2N6028RLRA ,Programmable UJT22N6027, 2N6028I+VAB VR1 R2 AI R =A GAR1 + R2R2G +–VR1 PV– V = V SS BR1 + R2R V = V – VG T P SVVAKR ..
2N6034 ,Leaded Power Transistor DarlingtonABSOLUTE MAXIMUM RATINGS
PNP 2N60342N6035 2N6036 .
Symbol Parameter NPN 2N60372N60382N6039 Unit
..
2SC2885 ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SC2885, 2946, 2946(1)NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-V ..
2SC2901 ,NPN SILICON TRANSISTORFEATURES 0 High Frequency Current Gain.
0 High Speed Switching.
. Small Output Capacitance.
AB ..
2SC2904 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
