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2N5771FSCN/a1345avaiPMP SILICON SWITCHING TRANSISTORS
2N5771FairchildN/a2200avaiPMP SILICON SWITCHING TRANSISTORS


2N5771 ,PMP SILICON SWITCHING TRANSISTORS
2N5771 ,PMP SILICON SWITCHING TRANSISTORS
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2N5772 ,NPN Switching TransistorElectrical Characteristics T =25°C unless otherwise notedaSymbol Parameter Test Condition Min. Max. ..
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2SC2878-A , For Muting and Switching Applications
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2N5771
PMP SILICON SWITCHING TRANSISTORS
2N5771 / MMBT5771 2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 15 V CEO V Collector-Base Voltage 15 V CBO V Emitter-Base Voltage 4.5 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5771 *MMBT5771 P Total Device Dissipation 350 225 mW D 2.8 1.8 Derate above 25°C mW/°C R Thermal Resistance, Junction to Case 125 °C/W θJC R Thermal Resistance, Junction to Ambient 357 556 °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  1997
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