Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2N5551S-RTK/P |
KEC |
N/a |
27600 |
|
|
2N5551YBU , NPN General-Purpose Amplifier
2N5555 ,Leaded JFET General Purpose
2N5555 ,Leaded JFET General Purpose
2N5555 ,Leaded JFET General Purpose
2N5564 ,Trans JFET N-CH 6-Pin TO-71S-04031—Rev. D, 04-Jun-018-12N5564/5565/5566Vishay Siliconix ..
2SC2814 ,NPN Epitaxial Planar Silicon Transistor High-Friquency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC2824 ,SILICON NPN EPITAXIAL TYPE(PCT PROCESS)TOSHIBA tIyTSCRETE/0PT()1ft097250 TOSHIBA (D I SCRETE/OPTO)SILICON NPN EPITAXIALTYPE (PCT PROCESS)1 ..
2SC2833 ,Si NPN triple diffused. High speed switching.Absolute Maximum Ratings (Ta=25°C)T'"-'-Unit 1 mmHe; . 15.5max. 4.7-H 13 5 ' . max.I . max.3. l11.0 ..