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2N5458MOTN/a30avaiN-Channel JFET General Purpose Amplifier/Switch
2N5458FairchildN/a6000avaiN-Channel JFET General Purpose Amplifier/Switch
2N5458MOTON/a13avaiN-Channel JFET General Purpose Amplifier/Switch


2N5458 ,N-Channel JFET General Purpose Amplifier/Switch
2N5458 ,N-Channel JFET General Purpose Amplifier/Switch
2N5458 ,N-Channel JFET General Purpose Amplifier/Switch
2N5459 ,N-Channel JFET General Purpose Amplifier/Switch
2N5459 ,N-Channel JFET General Purpose Amplifier/Switch
2N5459 ,N-Channel JFET General Purpose Amplifier/Switch
2SC2778 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating UnitCollector-base voltage (Emitter o ..
2SC2778 ,Small-signal deviceTransistors2SC2778Silicon NPN epitaxial planar typeFor high-frequency amplification Unit: mm+0.100. ..
2SC2780 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDFEATURES . PAtii,Kt,ei5,,ee,eitli',eNs 0 World Standard Miniature Package I I Sli :SOT--89 . 4. ..
2SC2780-T1 ,Silicon transistorFEATURES . PAtii,Kt,ei5,,ee,eitli',eNs 0 World Standard Miniature Package I I Sli :SOT--89 . 4. ..
2SC2784 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °c) SYMBOL CHARACTERISTIC TYP. MAX. UNIT DC Current Ga ..
2SC2785 ,NPN SILICON TRANSISTORFEATURES . High Voltage VCEO : 50 v MIN. (0.1-55%., (0,8326%qu 0 Excellent hFE Linearity : 0.92 TY ..


2N5458

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