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2N5401UTCN/a22129avaiPNP Silicon Transistor (General purpose amplifier High voltage application)


2N5401 ,PNP Silicon Transistor (General purpose amplifier High voltage application)THERMAL CHARACTERISTICSYWWCharacteristic Symbol Max UnitThermal Resistance, R 200 °C/WJAJunction−t ..
2N5401G ,Amplifier Transistor(PNP Silicon)ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N5401RLRAG ,Amplifier TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
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2SC2752 ,NPN SILICON POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 oC) SYMBOL hFE1' ton tstg tf VECO(sus) VCEX(su ..
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2N5401
Small Signal Amplifier PNP
2N5401
Preferred Device

Amplifier T ransistors
PNP Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not nor-
mal operating conditions) and are not valid simultaneously. If these limits are ex-
ceeded, device functional operation is not implied, damage may occur and reli-
ability may be affected.
THERMAL CHARACTERISTICS
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