2N5366 ,Leaded Small Signal Transistor General Purpose
2N5366 ,Leaded Small Signal Transistor General Purpose
2N5400 ,AMPLIFIER TRANSISTOR PNP SILICON
2N5400 ,AMPLIFIER TRANSISTOR PNP SILICON
2N5400 ,AMPLIFIER TRANSISTOR PNP SILICON
2N5400 ,AMPLIFIER TRANSISTOR PNP SILICON
2SC2735JTL-E , Silicon NPN Epitaxial
2SC2736 , Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V
2SC2740 , Si NPN Triple Diffused Junction Mesa
2SC2749 , Silicon NPN Power Transistors
2SC2750 , High Speed High Current Switching Industrial Use
2SC2752 ,NPN SILICON POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 oC)
SYMBOL
hFE1'
ton
tstg
tf
VECO(sus)
VCEX(su ..
2N5366
Leaded Small Signal Transistor General Purpose
2N5366 2N5366 PNP General Purpose Amplifier • This device is designed for general purpose amplifiers applications at collector currents to 300mA. • Sourced from process 68. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 4.0 V EBO I Collector current - Continuous 500 mA C T , T Operating and Storage Junction Temperature Range -55 ~ +150 °C J STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V Collector-Base Breakdown Voltage I = 10μA40 V CBO C V Collector-Emitter Breakdown Voltage I = 10mA 40 V CEO C V Emitter-Base Breakdown Voltage I = 10μA4.0 V EBO C I Collector Cut-off Current V = 40V 100 nA CBO CB I Collector Cut-off Current V = 40V 100 nA CES CB I Emitter Cut-off Current V = 4.0V 10 μA EBO EB h DC Current Gain V = 10V, I = 2.0mA 80 FE CE C V = 1.0V, I = 50mA 100 300 CE C V = 5.0V, I = 300mA 40 CE C V (sat) Collector-Emitter Saturation Voltage I = 50mA, I = 2.5mA 0.25 V CE C B I = 300mA, I = 30mA 1.0 C B V (sat) Collector-Emitter Saturation Voltage I = 50mA, I = 2.5mA 1.1 BE C B I = 300mA, I = 30mA 2.0 C B V (on) Base-Emitter On Voltage V = 10V, I = 2.0mA 0.5 0.8 V BE CE C C Output Capacitance V = 10V, f = 1MHz 8.0 pF ob CB C Input Capacitance V = 0.5V, f = 1MHz 35 pF ib CB h Small-Signal Current Gain V = 10V, I = 2.0mA, f = 1MHz 80 450 fe CE C Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25°C 5.0 mW/°C R Thermal Resistance, Junction to Ambient 200 °C/W θJA ©2002 Rev. A1, July 2002
