| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2N5302GE/BCA |
|
N/a |
25 |
 |
|
2N5307 ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.2002 Fairchild Semiconductor Corporation ..
2N5307 ,NPN General Purpose Amplifierapplications requiring extremely high current gain at currents to 1.0A.• Sourced from Process 05.• ..
2N5334 , Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
2N5336 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL CH ..
2N5365 ,Conductor Products, Inc. - SPRINGFIELD, NEW JERSEY 07091
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2735JTL-E , Silicon NPN Epitaxial
