2N4953 ,Leaded Small Signal Transistor General Purpose
2N4953 ,Leaded Small Signal Transistor General Purpose
2N4960 , Small Signal Transistors
2N4961 , NPN SILICON TRANSISTORS
2N4962 , NPN SILICON TRANSISTORS
2N4991 , Silicon bilateral switch (SBS) in package TO-92
2SC2688 ,NPN Silicon TransistorFEATURES
The 2SC2688 is designed for use in Color TV chroma output
circuits.
. High Electros ..
2SC2690 ,Use in audio and radio Frequency power amplifiers.ELECTRICAL CHARACTERISTICS (Ta = 25 ''C)
CHARACTERISTIC ‘MIN. TYP. MAX.
PACKAGE DIMENSIONS
..
2SC2690A ,Use in audio and radio Frequency power amplifiers.FEATURES . Suitable for use in driver stage of 50 to 100 W audio ampli-
fiers and output stage o ..
2SC2703 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SC2705 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SC2707 , isc Silicon NPN Power Transistor
2N4953
Leaded Small Signal Transistor General Purpose
2N4953 2N4953 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. • Sourced from Process 10. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 1.0 A C T , T Operating and Storage Junction Temperature Range -55 ~ +150 °C J ST * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. ©2002 Rev. B, July 2002
