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2N4403BU-2N4403TA-2N4403TFR-MMBT4403_NL Fast Delivery,Good Price
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Partno Mfg Dc Qty AvailableDescript
MMBT4403_NLFAIRCHILN/a3000avaiPNP General Purpose Amplifier
2N4403BUFSCN/a4600avaiPNP General Purpose Amplifier
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2N4403TAFCSN/a2000avaiPNP General Purpose Amplifier
2N4403TFRFAIRCHILN/a8000avaiPNP General Purpose Amplifier


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2SC2631 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
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2SC2641 ,TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)2SC2641TOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR T7QC7641'tiN...--UHF BAND POWER AMPLIFIER
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2N4403BU-2N4403TA-2N4403TFR-MMBT4403_NL
PNP General Purpose Amplifier
2N4403 / MMBT4403 2N4403 MMBT4403 C E TO-92 C B SOT-23 B E Mark: 2T PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 5.0 V EBO IC Collector Current - Continuous 600 mA Operating and Storage Junction Temperature Range -55 to +150 T , T °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N4403 *MMBT4403 P Total Device Dissipation 625 350 mW D 5.0 2.8 Derate above 25°C mW/°C Thermal Resistance, Junction to Case 83.3 RθJC °C/W R Thermal Resistance, Junction to Ambient 200 357 °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  2001 2N4403/MMBT4403, Rev. C
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