2N4124TA ,NPN General Purpose Amplifier2N4124 / MMBT41242N4124 MMBT4124CETO-92CB BSOT-23EMark: ZCNPN General Purpose AmplifierThis device ..
2N4125 ,Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW.
2N4125 ,Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW.
2N4125 ,Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW.
2N4125 ,Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW.
2N4125TA ,PNP General Purpose Amplifier2N41252N4125TO-92CBEPNP General Purpose AmplifierThis device is designed for use as general purpose ..
2SC2527 ,SILICON HIGH SPEED POWER TRANSISTORapplications.
The 2SC 2527 is especially well-suited for High frequency power amplifiers, Audio
..
2SC2528 , SILICON HIGH SPEED POWER TRANSISTOR
2SC2532 ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation ApplicationsApplications High h : h (1) = 5000 (min) (IC = 10 mA) FE FE h (2) = 10000 (min) (IC = 100 mA) ..
2SC2540 , NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)
2SC2552 ,Silicon NPN Power Transistors TO-220C package2SC2552TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)SWITCHING REGULATOR AND HIG ..
2SC2552 ,Silicon NPN Power Transistors TO-220C packageAPPLICATIONS. I m Rh/WX msinz IExcellent Switching Times: tr=1.0,us (Max.) tf=1.0,us (Max.) at 10:0 ..
2N4124TA
NPN General Purpose Amplifier
2N4124 / MMBT4124 2N4124 MMBT4124 C E TO-92 C B B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 30 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N4124 *MMBT4124 P Total Device Dissipation 625 350 mW D Derate above 25 C 5.0 2.8 mW/ C ° ° Thermal Resistance, Junction to Case 83.3 R °C/W θJC R Thermal Resistance, Junction to Ambient 200 357 C/W θ ° JA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 2N4124/MMBT4124, Rev A
