2N3773 ,COMPLEMENTARY SILICON POWER TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, R 1.17 °C/WJCJunction−to− ..
2N3789 ,Conductor Products, Inc. - SILICON PNP POWER TRANSISTORS
2N3809 , SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
2N3809 , SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
2N3819 ,Leaded JFET General Purposeapplications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced f ..
2N3819 ,Leaded JFET General Purpose2N38192N3819N-Channel RF Amplifier This device is designed for RF amplifier and mixer
2SC2412K T146Q , General purpose transistor (50V, 0.15A)
2SC2412K T146 R , General purpose transistor (50V, 0.15A)
2SC2412K T146Q , General purpose transistor (50V, 0.15A)
2SC2412K T146Q , General purpose transistor (50V, 0.15A)
2SC2412K T146R , General purpose transistor (50V, 0.15A)
2SC2412K T146R , General purpose transistor (50V, 0.15A)
2N3773-2N6609
COMPLEMENTARY SILICON POWER TRANSISTORS
NPN 2N3773*, PNP 2N6609
Preferred DeviceComplementary Silicon
Power Transistors
The 2N3773 and 2N6609 are PowerBase� power transistors
designed for high power audio, disk head positioners and other linear
applications. These devices can also be used in power switching
circuits such as relay or solenoid drivers, DC−DC converters or
inverters.
Features Pb−Free Packages are Available** High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage
hFE = 15 (Min) @ 8.0 A, 4.0 V
VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Distortion Complementary Designs
MAXIMUM RATINGS (Note 1)Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected. Indicates JEDEC Registered Data. Pulse Test: Pulse Width = 5 ms, Duty Cycle � 10%.
THERMAL CHARACTERISTICS**For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
