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2N3637MOTN/a520avaiGENERAL PURPOSE TRANSISTOR (PNP SILICON)
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2N3637MOTON/a37avaiGENERAL PURPOSE TRANSISTOR (PNP SILICON)


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2N3637
GENERAL PURPOSE TRANSISTOR (PNP SILICON)
2N3634, 2N3634L, 2N3635,
2N3635L, 2N3636,
2N3636L, 2N3637, 2N3637L
Low Power T ransistors
PNP Silicon
Features MILïPRFï19500/357 Qualified Available as JAN, JANTX, JANTXV and JANHC
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic Symbol 2N3634/L
2N3635/L
2N3636/L
2N3637/L
Unit
CollectorïEmitter Voltage VCEO ï140 ï175 Vdc
CollectorïBase Voltage VCBO ï140 ï175 Vdc
EmitterïBase Voltage VEBO ï5.0 Vdc
Collector Current
ï Continuous 1.0 Adc
Total Device Dissipation
@ TA = 25°C 1.0 W
Total Device Dissipation
@ TC = 25°C 5.0 W
Operating and Storage Junc-
tion Temperature Range
TJ, Tstg ï65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RJA 175 °C/W
Thermal Resistance, Junction to Case RJC 35 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Level Device Package Shipping
JAN
JANTXJANTXV
JANHC
2N3634
TOï39 Bulk2N3635
2N3636
2N3637
2N3634L
TOï5 Bulk2N3635L
2N3636L
2N3637L
http://
COLLECTOR
BASE
EMITTER
TOï5
CASE 205AA
STYLE 1
2N3634L
2N3635L
2N3636L
2N3637L
TOï39
CASE 205AB
STYLE 1
2N3634
2N3635
2N3636
2N3637
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