2N3209 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (Tamb = 25 tty unless otherwise specified)“,
Symbol Test Conditions
..
2N3227 ,Conductor Products, Inc. - SI NPN LP HF BJT MANUFACTURER
2N3227 ,Conductor Products, Inc. - SI NPN LP HF BJT MANUFACTURER
2N3244 ,Leaded Small Signal Transistor General Purpose
2N3244 ,Leaded Small Signal Transistor General Purpose
2N3244 ,Leaded Small Signal Transistor General Purpose
2SC2334. ,Silicon transistorDATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-S ..
2SC2335 ,SWITCHING SERIES NPN POWER TRANSISTORS(NPN)DATA SHEETSILICON POWER TRANSISTOR2SC2335NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPE ..
2SC2336 ,PNP/NPN SILICON EPITAXIAL TRANSISTOR2SA1006,1006A,1006B/2sC2336,2336A,2336B
, 2SA1006,1006A,1006B/2SC2336,2336A,23368
PNP/NPNI. 5 ..
2SC2336A ,PNP/NPN SILICON EPITAXIAL TRANSISTOR2SA1006,1006A,1006B/2sC2336,2336A,2336B
, 2SA1006,1006A,1006B/2SC2336,2336A,23368
PNP/NPNI. 5 ..
2SC2336B ,PNP/NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 "C)
m E
o“
2SA1006,1006A,1006B/2Sc2336, 2336A,23368
: ..
2SC2344 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF Power Amp, 100W Output Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2N3209
Leaded Small Signal Transistor General Purpose
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t G -= OlNSCORl 2N2894
717 msmn@§3©yfllg@m©mu@s 2N3209
s G S-THOMSON
HIGH-SPEED SATURATED SWITCHES
DESCRIPTION
The 2N2894, and 2N3209 are silicon planar epi-
taxial PNP transistors in Jedec T048 metal case,
intended for high speed, low saturation switching
applications up to 100 mA.
5 Products approved to CECC 50004-022/023
available on request.
INTERNAL SCHEMATIC DIAGRAM
s- M96
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
2N2894 2N3209
Vcao Collector-base Voltage " = 0) - 12 - 20 V
Vces Collector-emitter Voltage (V35 = 0) - 12 - 20 V
Vceo Ggksctor-emitter Voltage (lg = 0) - 12 _ 20 V
VEBO Emitter-base Voltage (lc = 0) - 4 V
lo Collector Current - 200 mA
Pun Total Power Dissipation at Tart, s 25 ( 0.36 W
at Tease C. 25 °C 1.2 W
Tstg, T,- Storage and Junction Temperature . - 65 to 200 'C
October 1988 1/4
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Ltl)12894-2N2202 s e s THOMSON 715.7%)
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THERMALDATA ' -
Rm J.Gase Thermal Resistance Junction-case Max 146 oC/1hl
Rm Famb Thermal Resistance Junction-ambient Max 486 "C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)
Symbol Parameter Test Condltlons Min, Typ. Max. Unit
logo Collector Cutoff Current =- a a -
(IE = 0) (for 2N2894 only) Vos 6 V Tami; 125 0 10 pA
ICES Collector Cutoff Current for 2N2894
(VBE = 0) ch = - 6 V - 80 nA
for 2N3209
VCE --- 10 V - 80 nA
Vca=-10V Tamb=125 T --10 HA
V(an) CBO Colllector-base Breakdown lo =- 10 pA
Voltage (ls = 0) for 2N2894 - 12 V
for 2N3209 - 20 V
V(BR)CES Collector-emltter Breakdown lc =- 10 pA
Voltage (VBE = 0) for 2N2894 - 12 V
for 2N3209 - 20 V
V(BR)CE0* Collector-emiiter Breakdown lo --- 10 mA
Voltage (la = 0) for 2N2894 - 12 V
for 2N3209 - 20 V
l/tss R)EBO Emltttter-baso Breakdown - -. -
Voltage (lc = 0) IE _ 100 pA 4 V
Veg (sat)" Collector-tsmitten Saturation for 2N2894
Voltage IO =..- 10 mA '3 b---- 1 mA - 0.15 V
lca-SOmA IBva-3rnA -0.2 V
Io-loom/l lissa-10rnA -0.5 V
for 2N3209
lc---10rnA lia-----1mA -0.15 V
lc=-30mA lB=--3rnA -0.2 V
Ic=-100mA IBa--10rnA -0.6 V
Vas (sat)* Base-emitter Saturation lo =-. 10 mA h, = - 1 mA _ 0.78 - 0.98 V
Voltage Io --- 30 mA IQ =- 3 mA - 0.85 - 1.2 V
lo =-100mA [isr---10mA -.1,7 V
hsus' DC Current Gain lo =- 10 mA VCE =- 0.3 V
for 2N2894 30
for 2N3209 25
lc---30 mA VCE=-0.5V
for 2N2894 40 150
for 2N3209 30 120
Ic----)) VcE=-IV
for 2N2894 25
for 2N3209 15
lo---30mA VcE---0.5V
Tamb = - 55 (
for 2N2894 17
for 2N3209 12
fr Transition Frequency lo =- 30 mA - -
f = 100 MHz VCE -. 10 V 400 MHz
CEBo Emitter-base Capacitance IO = 0 -
f=1MHZ VEB = 0.5 V ff pF
' Pulsed : pulse duration = 300 ps, duty cycle = 1 ya,
2/4 g- scs-n-Iomson
" mmmmmmm
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