| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2N2324S |
UNI |
N/a |
159 |
 |
SILICON CONTROLLED RECTIFIER |
2N2324S , SILICON CONTROLLED RECTIFIER
2N2326 , SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS
2N2369 ,NPN SILICON PLANAR EPITAXIAL TRANSISTORSapplications involving pulsed or low duty cycle operations.
3. These ratings give a maximum junc ..
2N2369A ,NPN SILICON PLANAR EPITAXIAL TRANSISTORSELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL CHA ..
2N2405 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL
..
2SC2221 , NPN SILICON EPITAXIAL TRANSISTOR
2SC2223 ,HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
q Micro package. T
0 High gain bandwidth product.' f-r = 600 MHz TYP.
E
E 0 Low ou ..
2SC2223-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta =" 25 °C)
CHARACTERISTIC SYMBOL . . . . TEST CONDITIONS
--'-
..
