| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2MBI75U4A-120 |
FUJI |
N/a |
2631 |
 |
|
2MBI75VA-120-50 , IGBT MODULE (V series) 1200V / 75A / 2 in one package
2N1132 , Medium Current General Purpose Amplifiers and Switches
2N1132 , Medium Current General Purpose Amplifiers and Switches
2N1132B , Small Signal Transistors
2N1307 , alloy-junction germanium transistors
2SC1940 ,NPN SILICON TRANSISTORFEATURES
The 28C1940 is designed for use in driver stages of audio
frequency amplifiers.
I ..
2SC1940 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL
CHARACTERISTIC
hFE1
hFE2
DC Current Gai ..
2SC1941 ,NPN SILICON TRANSISTORFEATURES . High total power dissipation and high breakdown voltage: (0.729353) (01037)
1.0 IN at 2 ..
