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28600D TI|Texas Instruments N/a 11



28C16 ,16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTIONM28C1616K (2K x 8) PARALLEL EEPROMwith SOFTWARE DATA PROTECTIONNOT FOR NEW DESIGNFAST ACCESS TIME: ..
28C256 ,256K 32K x 8 Paged CMOS E2PROMAT28C256
28C64 , 64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection
28C64A-20P , 64K (8K x 8) CMOS EEPROM
28C64A-25P , 64K (8K x 8) CMOS EEPROM
2SB1217 ,PNP SILICON POWER TRANSISTORFEATURES . Low Collector Saturation Voltage. I (0.334 MAX.) (0318th?ng ' 3.2 t 0.2(t 0.126) - V ..
2SB1218 ,TransistorI Transistors 1 2581218, 2SB]21v8A2531218, 253121“ ,Silicon PNP Epitaxial PIanarType \I Package Dim ..
2SB1218A ,Small-signal deviceTransistors2SB1218ASilicon PNP epitaxial planar typeFor general amplification Unit: mmComplementary ..
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