| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 285112 |
TI|Texas Instruments |
N/a |
15 |
 |
|
28C16 ,16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTIONM28C1616K (2K x 8) PARALLEL EEPROMwith SOFTWARE DATA PROTECTIONNOT FOR NEW DESIGNFAST ACCESS TIME: ..
28C256 ,256K 32K x 8 Paged CMOS E2PROMAT28C256
28C64 , 64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection
28C64A-20P , 64K (8K x 8) CMOS EEPROM
28C64A-25P , 64K (8K x 8) CMOS EEPROM
2SB1214 ,PNP Epitaxial Planar Silicon TransistorFeatures [2SB1214] · High DC current gain. · Darlington connection. · Small and slim package permit ..
2SB1216 ,PNP Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsFeatures · Low collector-to-emitter saturation voltage. · Good linearity of h .FE · Small and slim ..
2SB1217 ,PNP SILICON POWER TRANSISTORFEATURES . Low Collector Saturation Voltage. I (0.334 MAX.) (0318th?ng
' 3.2 t 0.2(t 0.126) -
V ..
