Partno |
Mfg |
Dc |
Qty |
Available | Descript |
27C128Q |
NS|National Semiconductor |
N/a |
3000 |
|
|
27C16 ,16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified27C1616,384-Bit(2048x8)UVErasableCMOSPROMMilitaryQualifiedJanuary198927C1616,384-Bit(2048x8)UVErasa ..
27C160 ,16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROMAbsolute Maximum Ratings” maycause permanent damage to the device. These are stress ratings only an ..
27C2001 ,1 Mbit 128Kb x8 UV EPROM and OTP EPROMapplications where the content is programmedV VCC PPonly one time and erasure is not required, theM ..
27C2048 , 2M-BIT [256Kx8/128x16] CMOS EPROM
27C256-10 , 256K-BIT [32K x 8] CMOS EPROM
2SA952 ,PNP SILICON TRANSISTORPNP SILICON TRANSISTOR
2SAS52
DESCRIPTION The 2SA952 is designed for use in output stage of p ..
2SA953 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
CHARACTERISTIC
DC Current Gain
DC Current Gain
TYP. M ..
2SA954 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
SYMBOL CHARACTERISTIC . TYP. MAX. UNIT
DC Current Gain
..