1SV153 ,SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODETOSHIBA 4nTSCRiiyl'E/()pT()1 la'? DEI‘ID'WESD -fimy:iifiN E. I
90972S0_TosHrBA (DISCRETE/OPTO) - ..
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1SV153
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE
TOSHIBA EI)1SCRCTE/0p'I'01
la'? ocflniocri'iesuo finnfiéfiu E. [I
90972So, TOSHIBA (DISCRETE IOPTO)
Silicon Epitaxial Planar Type
67C 09374
Variable Capacitance Diode
1SIM53
07-37-14 L
Unit in mm
TV TUNING. I
+1125 "
Ids-als :3 N... '
i--. -a
FEATURES: iEitr? . F)
. High Capacitance Ratio t C2V/625V=6.5 (Typ.)
. Low Series Resistance t rs=0.459 (Typ.) "%r E. g
0.65 I 1
HAXIMUM RATINGS (Ta=25°C) a6ukal t, 2. -.__°15
CHARACTERISTIC SYMBOL RATING UNIT :1
Reverse Voltage VR 30 V I
Peak Reverse Voltage VRM 35 Ir
= l. GATEODE
(RI, 1010) 2 ANODE
Junction Temperature -Tj 125 "C JEDEG -
Storage Temperature Range Tstg -55 ~125 "c EIAJ -
TOSHIBA 1-2J1A
ELECTRICAL CHARACTERISTICS (Ta=25''C) Weight t 0.02g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage " IR=111A 30 - - V
Reverse Current IR VR=28V - - 10 nA
Capacitance C27 VR=2V, f=1MHz 14.16 - 16.25 pF
Capacitance C25Y VR=25V, f=1MHz 2.11 - 2.43 pF
Capacitance Ratio C2V/CZSV - 5.90 - 7.15
Series Resistance rs C=9pF, f=lo7OMHz - - 0.6 n
Note '. Available in matched group for
. capacitance to 2.5%. CV - VR
C(Max.) - C(Min.)
c(Min.) s
(VR=2 - 25V)
CATHODE MARK: RED
CAPACITANCE cv (p10)
REVERSE VOLTAGE " (v)
12 16 2O " 28
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www.ic-phoenix.com
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