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1SS412ToshibaN/a1280avaiSwitching diode


1SS412 ,Switching diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
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1SS412
Switching diode
1SS412 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS412

General-Purpose Rectifier Applications Low forward voltage : VF = 1.0 V (typ.) Low reverse current : IR = 0.1 nA (typ.) Small total capacitance : CT = 3.0 pF (typ.) Small package : SC-70
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)

Equivalent Circuit (Top View)

Marking

Weight: 0.006 g (typ.)
Unit: imm
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