1SS394 ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application1SS394 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Applica ..
1SS395 ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application1SS395 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Applica ..
1SS396 ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switc ..
1SS397 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 1.0V (typ.) F High voltage : V = 400V (min.) ..
1SS398 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 1.0V (typ.) F High voltage : V = 400V (min) R ..
1SS398 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS394
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application
1SS394 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS394 High Speed Switching Application Small package Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Maximum Ratings (Ta = 25°C)
Electrical Characteristics (Ta = 25°C)
Marking Weight: 0.012g
Unit: mm
