Partno |
Mfg |
Dc |
Qty |
Available | Descript |
1SS393/R9 |
TOSHIBA|TOSHIBA |
N/a |
1650 |
|
|
1SS394 ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application1SS394 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Applica ..
1SS395 ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application1SS395 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Applica ..
1SS396 ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switc ..
1SS397 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 1.0V (typ.) F High voltage : V = 400V (min.) ..
1SS398 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 1.0V (typ.) F High voltage : V = 400V (min) R ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM