| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 1SS383/A4 |
TOSHIBA|TOSHIBA |
N/a |
4310 |
 |
|
1SS384 ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switc ..
1SS385 ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: m ..
1SS385F ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: ..
1SS385FV ,Small-signal Schottky barrier diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
1SS387 ,SWITCHING DIODES1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Application ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
