1SS372 ,SCHOTTKY BARRIER RECTIFIERS1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Applica ..
1SS372 ,SCHOTTKY BARRIER RECTIFIERS1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Applica ..
1SS373 ,DIODE (HIGH SPEED SWITCHING APPLICATION)1SS373HIGH SPEED SWITCHING APPLICATION Unit in mmSmall Package~---“-- - “v--“b v
0.8-lc0.1
T - ..
1SS373 ,DIODE (HIGH SPEED SWITCHING APPLICATION)1SS373HIGH SPEED SWITCHING APPLICATION Unit in mmSmall Package~---“-- - “v--“b v
0.8-lc0.1
T - ..
1SS374 ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application1SS374 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Applica ..
1SS376 , Switching diode
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS372
SCHOTTKY BARRIER RECTIFIERS
1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS372 High Speed Switching Application Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
Maximum Ratings (Ta = 25°C) Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C) ― 20
Marking Weight: 0.006g
Unit: mm
