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1SS349
Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application
1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type
1SS349 Ultra High Speed Switching Application Low forward voltage : VF (3) = 0.49V (typ.) Low reverse current : IR = 50µA (max) Small package : SC−59
Maximum Ratings (Ta = 25°C)
Electrical Characteristics (Ta = 25°C) VF (1)
Marking Weight: 0.012g
Unit: mm
