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1SS348
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching
1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS348 Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.56V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-59
Maximum Ratings (Ta = 25°C)
Electrical Characteristics (Ta = 25°C) ―
Marking Weight: 0.012g
Unit: mm
