| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 1SS332 |
ROHM |
N/a |
6000 |
 |
|
1SS336 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application ..
1SS337 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application ..
1SS344 ,Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Ap ..
1SS345 ,UHF Detector, Mixer Applications Silicon Epitaxial Schottky Barrier DiodeFeatures Package Dimensions · Small interterminal capacitance (C=0.45pF typ).unit:mm · Low forward ..
1SS348 ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switc ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
