| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 1SS314(TH3,F,T) |
TOSHIBA|TOSHIBA |
N/a |
2000 |
 |
|
1SS315 ,Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer ApplicationsApplications Unit: mm Maximum Ratings (Ta 25°C)Characteristics Symbol Rating Unit Maximum ..
1SS319 ,Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit: ..
1SS321 ,Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switch ..
1SS321 ,Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switch ..
1SS322 ,Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switch ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
