1SS311 ,Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching
1SS311 ,Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 0.94V (typ.) FHigh voltage : V = 400V (min) R ..
1SS312 ,DIODE VHF TUNER BAND SWITCH APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNIT
Forwardvo1tagelv ..
1SS313 ,DIODE VHF TUNER BAND SWITCH APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNIT
Forwardvo1tagelv ..
1SS314 ,Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch ApplicationsApplications Unit: mm Small package. Small total capacitance: C = 1.2 pF (max) T Low seri ..
1SS315 ,Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer ApplicationsApplications Unit: mm Maximum Ratings (Ta 25°C)Characteristics Symbol Rating Unit Maximum ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
1SS311
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications
1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS31 1 High Voltage,High Speed Switching Applications Low forward voltage : VF = 0.94V (typ.) High voltage : VR = 400V (min) Fast reverse recovery time : trr = 1.5ns (typ.) Small total capacitance : CT = 3.2pF (typ.) Small package : SC−59
Maximum Ratings (Ta = 25°C)
Electrical Characteristics (Ta = 25°C) VF (1)
Marking Weight: 0.012g
Unit: mm
