1SS308 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-74A Low forward voltage : V = 0.92V (typ.) F (3)Fa ..
1SS309 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-74A Low forward voltage : V = 0.90V (typ.) F (3)Fa ..
1SS311 ,Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching
1SS311 ,Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 0.94V (typ.) FHigh voltage : V = 400V (min) R ..
1SS312 ,DIODE VHF TUNER BAND SWITCH APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNIT
Forwardvo1tagelv ..
1SS313 ,DIODE VHF TUNER BAND SWITCH APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNIT
Forwardvo1tagelv ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
1SS308
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications
1SS308 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS308 Ultra High Speed Switching Applications Small package : SC-74A Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)
Maximum Ratings (Ta = 25°C) (*) Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Marking Weight: 0.014g
Unit: mm
