| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 1SS302TE85L |
Toshiba|TOSHIBA |
N/a |
1600 |
 |
TOSHIBA Diode Silicon Epitaxial Planar Type |
1SS302TE85L , TOSHIBA Diode Silicon Epitaxial Planar Type
1SS303 ,Switching diodeFEATURESPACKAGE DIMENSIONS (Unit: mm)• Low capacitance: Ct = 2.5 pF TYP.• High speed switching: trr ..
1SS303-T1 ,Switching diodeapplications including switching, limitter, clipper.1.25±0.1• Double diode configuration assures ec ..
1SS303-T2 ,Switching diodeDATA SHEETSILICON SWITCHING DIODE1SS303HIGH SPEED SWITCHINGSILICON EPITAXIAL DOUBLE DIODE : COMMON ..
1SS304 ,Switching diodeELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITFor ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
