1SS294 ,SCHOTTKY BARRIER RECTIFIERS1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mmLow Voltage High Spe ..
1SS295 ,DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNIT
Forwardvo1tagelv ..
1SS300 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-70 Low forward voltage : V = 0.92V (typ.) F (3) Fa ..
1SS301 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-70 Low forward voltage : V = 0.92 V (typ.) F (3)Fa ..
1SS302 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-70 Low forward voltage : V = 0.90V (typ.) F (3)Fas ..
1SS302TE85L , TOSHIBA Diode Silicon Epitaxial Planar Type
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
1SS294
SCHOTTKY BARRIER RECTIFIERS
1SS294
TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type
1SS294 Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package : SC−59
Maximum Ratings (Ta = 25��� �C)
Electrical Characteristics (Ta = 25��� �C)
VF (1) ―
Marking Unit: mm
Weight: 0.012g
