1SS293 ,Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching1SS293 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Unit: mmLow Voltage High Spe ..
1SS294 ,SCHOTTKY BARRIER RECTIFIERS1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mmLow Voltage High Spe ..
1SS295 ,DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNIT
Forwardvo1tagelv ..
1SS300 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-70 Low forward voltage : V = 0.92V (typ.) F (3) Fa ..
1SS301 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-70 Low forward voltage : V = 0.92 V (typ.) F (3)Fa ..
1SS302 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-70 Low forward voltage : V = 0.90V (typ.) F (3)Fas ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
1SS293
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching
1SS293
TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type
1SS293 Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package
Maximum Ratings (Ta = 25��� �C)
Electrical Characteristics (Ta = 25��� �C)
VF (1) ― VR = 0, f = 1MHz ― 18
Unit: mm
Weight: 0.13g
