Partno |
Mfg |
Dc |
Qty |
Available | Descript |
1SS272(TE85L,F) |
TOS|TOSHIBA |
N/a |
3000 |
|
|
1SS293 ,Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching1SS293 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Unit: mmLow Voltage High Spe ..
1SS294 ,SCHOTTKY BARRIER RECTIFIERS1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mmLow Voltage High Spe ..
1SS295 ,DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNIT
Forwardvo1tagelv ..
1SS300 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-70 Low forward voltage : V = 0.92V (typ.) F (3) Fa ..
1SS301 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-70 Low forward voltage : V = 0.92 V (typ.) F (3)Fa ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer