| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 1SS2076 |
HITACHI |
N/a |
50000 |
 |
|
1SS220 ,Silicon switching diodeELECTRICAL CHARACTERISTICS (Ta=25 °C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
VF1 |F=1O mA
..
1SS220-L ,Silicon switching diodeFEATURES
PACKAGE DIMENSIONS
in millimeters 0 Low capacitance: Ct=4.0 pF MAX.
0 High speed sw ..
1SS220-T1B ,Silicon switching diodeELECTRICAL CHARACTERISTICS (Ta=25 °C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
VF1 |F=1O mA
..
1SS220-T2B ,Silicon switching diodeFEATURES
PACKAGE DIMENSIONS
in millimeters 0 Low capacitance: Ct=4.0 pF MAX.
0 High speed sw ..
1SS221 ,Silicon switching diodeDATA SHEET
SILICON SWITCHING DIODES
1 SS220,133221
HIGH SPEED SWITCHING
SILICON EPITAXIAL D ..
2501N , Dual N-Channel 2.5V Specified PowerTrench MOSFET
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
