1SS200 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS200 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Unit: mmUltra High Speed Switching Appl ..
1SS200 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS200 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Unit: mmUltra High Speed Switching Appl ..
1SS201 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS201 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Unit: mmUltra High Speed Switching Appl ..
1SS201 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS201 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Unit: mmUltra High Speed Switching Appl ..
1SS220 ,Silicon switching diodeELECTRICAL CHARACTERISTICS (Ta=25 °C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
VF1 |F=1O mA
..
1SS220-L ,Silicon switching diodeFEATURES
PACKAGE DIMENSIONS
in millimeters 0 Low capacitance: Ct=4.0 pF MAX.
0 High speed sw ..
2501N , Dual N-Channel 2.5V Specified PowerTrench MOSFET
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
1SS200
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
1SS200
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS200 Ultra High Speed Switching Application Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)
Maximum Ratings (Ta = 25��� �C)
(*) Unit Rating. Total Rating = Unit Rating × 1.5.
Electrical Characteristics (Ta = 25��� �C)
VF (1)
Weight: 0.13g
Unit: mm
