| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 1SS198TE |
HIT |
N/a |
3570 |
 |
|
1SS200 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS200 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Unit: mmUltra High Speed Switching Appl ..
1SS200 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS200 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Unit: mmUltra High Speed Switching Appl ..
1SS201 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS201 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Unit: mmUltra High Speed Switching Appl ..
1SS201 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS201 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Unit: mmUltra High Speed Switching Appl ..
1SS220 ,Silicon switching diodeELECTRICAL CHARACTERISTICS (Ta=25 °C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
VF1 |F=1O mA
..
2501N , Dual N-Channel 2.5V Specified PowerTrench MOSFET
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
