| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 1SS101 |
NEC|NEC |
N/a |
38000 |
 |
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY |
1SS103 DZ
1SS103 NEC
1SS106 TOS, Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
1SS106 TOSHIBA, Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
1SS106 HITACHI , Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
1SS106CD HITACHI
1SS101 , SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY
1SS119 , Silicon Epitaxial Planar Diode for High Speed Switching
1SS119 , Silicon Epitaxial Planar Diode for High Speed Switching
1SS123 ,SILICON SWITCHING DIODEELECTRICAL CHARACTERISTICS (Ta = 25 oC)
CHARACTERISTIC SYMBOL. . . . TEST CONDITIONS
i IF =1.o ..
1SS123-T1B ,Silicon switching diodeELECTRICAL CHARACTERISTICS (Ta = 25 oC)
CHARACTERISTIC SYMBOL. . . . TEST CONDITIONS
i IF =1.o ..
2500AT44M0400E , WiMAX 2.3 - 2.7 GHz Chip Antenna
2501N , Dual N-Channel 2.5V Specified PowerTrench MOSFET
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
