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1S1585TOSHIBAN/a20000avaiSilicon Epitaxial Planar Type
1S1588TOSHIBA N/a25000avaiSilicon epitaxial planar type diode.


1S1588 ,Silicon epitaxial planar type diode.- ' 1 ',:.r'" __- , S1 585ucl Sl $88 :i.l:::n Epitaxial; Planar Type b ';' ULTRA HIGH SPE ..
1S1588 ,Silicon epitaxial planar type diode.FEATURES..Low Forward Voltage t VF=1.0V (Max.)' Small Total Capacitance t CT=2pF (Max.), . Fast Rev ..
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1S1585-1S1588
Silicon Epitaxial Planar Type
r'"' "13158549131588
sailor, Epitaxial; Planar Type
ULTRA HIGH SPEED SWITCHING APPLICATIONS.
FEATURES..
. Low Forward Voltage t VF=1.0V (Max.)
' Small Total Capacitance t thy--
. Fast Reverse Recovery Time t
MAXIMUM RATINGS (Ta=25°C)
2pF (Max.)
Trr=2ns (Max.)
Unit in mm
ZGUMIN. I i l
¢19mx.
42 MAX _
CATHODE b-LAEK
25011er .
CHARACTERISTIC SYMBOL RATING UNIT
IS1585 90
22:32: 55:1. IS1586 55
g 1S1587 VRM V
1S1588 35
181585 80
Reverse Volta e
g 1S1587 VR 50 v
1S1588 30
$322 480
Maximum (Peak)
In, mA
Forward Current 1S1587 400
1S1588 360
131586 150
Average Forward
Current 131587 130
131588 120
JEDEC 00-35
EIAJ SC-dit)
TOSHIBA 1-2AIA
Weight t 0.14g
Marking
181588 ()
TOSHIBA BDRPDRATIDN
CHARACTERI ST IC SYMBOL RATING UNIT
IS1585
Surge Current 151586 700
(1 sec) IFSM mA
1S1587 600
IS1588 500
Power Dissipation P 300 mil
Junction Temperature Td 175 "c
Storage Temperature Range Tstg -65 m 175 "c
ELECTRICAL CHARACTERISTICS ( Ta=25°C )
.1S1585~1S1588
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
- - 1.0
Forward Voltage 131586 VF IF = 100mA ll
1S1587 - - 1.2
131588 - - 1.3
1s1585 VR = 80V
Reverse Current IR VR = 50V - - 0.5 pit
181588 11R = 30V
IS1585
181586 VR - o - - 2
Total Capacitance 1S1587 CT f = 1MHz pF
181588 - - 3
1S1585 VR = 6V
Reverse Recovery 181586 trr IF =10mit - - 2 n3
Time 131587 Ri, = 1002
IS1588 (Fig.) - - z,
-c135-
TOSHIBA CORPORATION
- c .5»; - _ __;. '
et 1S1585--1S1588
Fig. trr TEST CIRCUIT
OUTPUT WAVEFORM
INPUT WAVEFORM CC"""')
11IP0T 0.01m DOT OUTPUT IF
N 0.1 13
t a N g IR
-tw- I
131585 T - 2
151586 IF - " 1.51537 2-Tsit IF
soo soo -
we 'ii'
1t 50 C, 50
e., so :.. 30
Fe 10 P? 1..
i» g ©
g, a o o
5: 1 M 1
4 g?, g -
i 05 rs"A x Q2
F? 0:: r-f,', (13
01 I 1
0.2 0.3 " 0.5 0.5 o,'? 0.5 09 LO 1.1 IA 113 0:5 "
?GRWARD VOLTAGE " (V)
131558 IF - " 181555 IR - VR
200 los
V so e.1 m.
(a 30 v
e 20 C' 1
a - 1;:
3: cr h'.':
x 3 ii
co R l
x 1 2:
A - 71
cs,', o? ci "
0 R, ts
5:: QCs g
0.5 0.4 0.5 0.6 0.7 0.8
P'0'RI'MeiD VOLTAGE
TOSHIBA CORPORATIDN
TOSHIBA CORPORATION
POWER DlSHIPATlUN P (MW)
5—- 7'.) m
m 01 "‘
ESE VOLTAGE TR (v)
SE VOLTAGE»VR (7)
REVERSE CURRENT In (HA)
REVERSE CURRENT 13 (HA)
JSlSBE
1S1585--1S1588

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