1PS76SB10 ,Schottky barrier single diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
1PS76SB17 ,Schottky barrier diodeAPPLICATIONSMarking code: S7.The marking bar indicates the cathode.• UHF mixers• Sampling circuitsF ..
1PS76SB17 ,Schottky barrier diodeELECTRICAL CHARACTERISTICST =25 °C unless otherwise specified.ambSYMBOL PARAMETER CONDITIONS TYP. MA ..
1PS76SB21 ,Schottky barrier diodeELECTRICAL CHARACTERISTICST =25 °C unless otherwise specified.jSYMBOL PARAMETER CONDITIONS MIN. MAX. ..
1PS76SB21 ,Schottky barrier diodeLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
1PS76SB21 ,Schottky barrier diode
24FC256T-I/SM , 256K IC CMOS Serial EEPROM
24HST-1041 , 1000 BASE -T MAGNETICS MODULES
24HST1041-2 , 1000 BASE -T MAGNETICS MODULES
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1PS76SB10
Schottky barrier single diode
1PS76SB10
Schottky barrier single diode17 December 2012 Product data sheet General descriptionPlanar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOD323 Surface-Mounted Device (SMD) plastic package.
Features and benefits Low forward voltage• Low capacitance• AEC-Q101 qualified
Applications Ultra high-speed switching• Line termination• Voltage clamping• Reverse polarity protection
Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit forward current - - 200 mA reverse voltage - - 30 V forward voltage IF = 10 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C - 400 mV
Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol K cathode[1] A anode1
SOD323aaa-003679 A
NXP Semiconductors 1PS76SB10
Schottky barrier single diode Ordering information
Table 3. Ordering information
PackageType number
Name Description Version1PS76SB10 SOD323 plastic surface-mounted package; 2 leads SOD323
Marking
Table 4. Marking codes
Type number Marking code1PS76SB10 S0
Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit reverse voltage - 30 V forward current - 200 mA
IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 - 300 mA
IFSM non-repetitive peak forwardcurrent tp < 10 ms; Tj(init) = 25 °C - 600 mA junction temperature - 125 °C
Tamb ambient temperature -55 125 °C
Tstg storage temperature -65 150 °C
Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max UnitRth(j-a) thermal resistancefrom junction to
ambient
in free air [1] - - 450 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.
NXP Semiconductors 1PS76SB10
Schottky barrier single diode
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max UnitIF = 0.1 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C - 240 mV
IF = 1 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C - 320 mV
IF = 10 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C - 400 mV
IF = 30 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C - 500 mV forward voltage
IF = 100 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C - 800 mV reverse current VR = 25 V; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C - 2 µA diode capacitance VR = 1 V; f = 1 MHz; Tamb = 25 °C - - 10 pF
006aac829
103(mA)
(1)
(1)
(2)
(2) (3)
(3)
aaa-004515
VR (V) 3020
103(µA)
(1)
(2)
(3)
NXP Semiconductors 1PS76SB10
Schottky barrier single diode006aac891
VR (V)0 302010(pF)
Tamb = 25 °C; f = 1 MHz
Fig. 3. Diode capacitance as a function of reverse voltage; typical values
11. Test information
11.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.
12. Package outline2.72.3 1.81.6
1.10.81.351.15
NXP Semiconductors 1PS76SB10
Schottky barrier single diode
13. Soldering
solder lands
solder resist
occupied area
solder paste
0.5(2×)0.6(2×)
0.6(2×)0.5 (2×)
sod323_fr
Dimensionsinmm
Fig. 5. Reflow soldering footprint for SOD323
1.5(2×)
1.2(2×)2.75
sod323_fw
solderlands
solderresist
occupiedarea
preferred transportdirection during soldering
Dimensionsinmm
Fig. 6. Wave soldering footprint for SOD323
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
1PS76SB10 v.4 20121217 Product data sheet - 1PS76SB10 v.3
NXP Semiconductors 1PS76SB10
Schottky barrier single diode
15. Legal information
15.1 Data sheet status
Documentstatus [1][2] Productstatus [3] Definition
Objective[short] datasheet
Development This document contains data fromthe objective specification for productdevelopment.
Preliminary[short] datasheet
Qualification This document contains data from thepreliminary specification.
Product[short] datasheet
Production This document contains the productspecification.
[1] Please consult the most recently issued document before initiating orcompleting a design.[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://.
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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.
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