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1N914BWS
Small Signal Diode
1N4148WS / 1N4448WS / 1N914BWS — Small Signal Diodes April 2012 1N4148WS / 1N4448WS / 1N914BWS Small Signal Diodes Features Device Marking Code Device Type Device Marking • General Purpose Diodes 2 1N4148WS S1 • Fast Switching Device (T < 4.0ns) RR 1N4448WS S2 • Very Small and Thin SMD Package 1N914BWS S3 • Moisture Level Sensitivity 1 • Pb-free Version and RoHS Compliant 1 1. Cathode 2. Anode • Matte Tin (Sn) Lead Finish SOD-323 Flat Lead ELECTRICAL SYMBOL Band Indicates Cathode • Green Mold Compound Absolute Maximum Ratings* T = 25°C unless otherwise noted a Symbol Parameter Value Units V Non-Repetitive Peak Reverse Voltage 100 V RSM V Repetitive Peak Reverse Voltage 75 V RRM I Repetitive Peak Forward Current 300 mA FRM I Continuous Forward Current 150 mA O T Operating Junction Temperature +150 °C J T Storage Temperature Range -55 to +150 °C STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation (T = 25°C) 200 mW D C R Thermal Resistance, Junction to Ambient * 500 °C/W θJA * Device mounted on FR-4 PCB minimum land pad. Electrical Characteristics T = 25°C unless otherwise noted a Symbol Parameter Test Conditions Min. Typ. Max. Units BV Breakdown Voltage I = 100 μA 100 V R R I = 5 μA 75 V R I Reverse Current V = 20 V 25 nA R R V = 75 V 5 μA R V Forward Voltage 1N4448WS/914BWS I = 5 mA 0.62 0.72 V F F 1N4148WS I = 10 mA 1 V F 1N4448WS/914BWS I = 100 mA 1 V F C Diode Capacitance V = 0, f = 1 MHz 4 pF O R T Reverse Recovery Time I = 10 mA, I = 60 mA, 4ns RR F R I = 1 mA, R = 100 Ω RR L © 2012 1N4148WS / 1N4448WS / 1N914BWS Rev. B0 1
