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1N6263
60 V, 400 mW silicon schottky barrier diode
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1N6263SMALL SIGNAL SCHOTTKY DIODE
October 2001 - Ed: 1B
ABSOLUTE RATINGS (limiting values)
THERMAL RESISTANCE* On infinite heatsink with 4mm lead length Pulse test: tp≤ 300μsδ<2%.
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICSDYNAMIC CHARACTERISTICS
Metalto silicon junction diode featuring high break-
down, low turn-on voltage and ultrafast switching.
Primarly intendedfor high level UHF/VHF detec-
tion and pulse application with broad dynamic
range.
DESCRIPTION
1N6263
Fig.1: Forward current versus forward voltage
(typical values).
Fig.2: CapacitanceC versus reverse applied
voltage VR (typical values).
Fig.3: Reverse current versus ambient tempera-
ture.
Fig.4: Reverse current versus continuousre-
verse voltage (typical values).
2/3
3/3
1N6263Cooling method : by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.15g
PACKAGE MECHANICAL DATADO-35
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