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16TTS12IRN/a98avai1200V 10A Phase Control SCR in a TO-220 package
16TTS16IRN/a7avai1600V 10A Phase Control SCR in a TO-220 package


16TTS12 ,1200V 10A Phase Control SCR in a TO-220 packageFeaturesTSMThe 16TTS.. SAFEIR series of silicon controlledV = 800 to 1600Vrectifiers are specifical ..
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16TTS12-16TTS16
800V 10A Phase Control SCR in a TO-220 package
International
IéaR Rectifier
Bulletin 12115 rev. D 12/98
SAFEIR Series
16TTS..
PHASE CONTROL SCR
Description/Features
The 16TTS.. SAFEIR series of silicon controlled
rectifers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125° C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectirers which are available in identical
package outlines.
Output Current in Typical Applications
v, < 1.4V @ 10A
ITSM = 200A
vRRM = 800 to 1600V
Applications
Single-phase Bridge Three-phase Bridge Units
Capacitive inputfilterTA = 55°C, To =125°C,
common heatsinkofr'CIW
13.5 17 A
Major Ratings and Characteristics
Package Outline
Characteristics 16TTS.. Units
IHAV) Sinusoidal 10 A
waveform
IRMS 16 A
VRRMNDRM upto 1600 V
ITSM 200 A
v, @10A,TJ=25°C 1.4 V
dv/dt 500 V/ps
di/dt 150 Alps
T0-220AC
T, range -40to 125 ''C
Also available in SMD-220 package (series 16TTS..S)
1
16TTS.. SAFEIR Series
International
Bulletin 12115 rev. D 12198 TOR Iiuctifier
Voltage Ratings
VRRM, maximum VDRM, maximum IRRM/lDRM
Part Number peak reverse voltage peak direct voltage 125°C
V V mA
16TTSO8 800 800 10
16TTS12 1200 1200
16TTS16 1600 1600
Absolute Maximum Ratings
Parameters 16TTS.. Units Conditions
|T(AV) Max.AverageOn-stateCurrent 10 A @Tc=98°C,180°conductionhalfsinewave
|RMS Max.RMSOn-stateCurrent 16
lTSM Max.PeakOneCycleNon-Repetitive 170 1OmsSinepulse,ratedVRRMapplied
SurgeCurrent 200 10msSine pulse,novoltagereapplied
Pt Max. Pttortusing 144 A25 1OmsSinepulse,ratedVRRMapplied
200 10msSinepulse,novoltagereapplied
|2\lt Max. fHtforusing 2000 A2\/s t=0.1to10ms,novoltagereapplied
VTM Max.On-stateVoltageDrop 1.4 V @10A,TJ= 25''C
r, On-state sloperesistance 24.0 mn To-- 125°C
Vmo, Threshold Voltage 1.1 V
IRMIDM Max.Reverse and Direct 0.5 mA T, = 25 ''C VR = rated VRRM/ VDRM
Leakage Current 10 T: = 125 "C
le, Holding Current Typ. Max. Anode Supply = 6V, Resistive load, Initial IT=1A
- 100 mA 16TT808,16TTS12
100 150 16TTS16
IL Max.La1chingCurrent 200 mA AnodeSupply=6V,Resistiveload
dv/dt Max. Rate of Rise of off-state Voltage 500 V/ps
di/dt Max. Rate of Rise oftumed-on Current 150 Alps

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