15MQ040N ,40V 2.1A Schottky Discrete Diode in a SMA packageFeaturesT range - 40 to 150 °CJSurface mountableExtremely low forward voltageImproved reverse block ..
15MQ040NTR ,40V 2.1A Schottky Discrete Diode in a SMA packageApplicationsFSwitching power suppliesMeter protectionV 40 VRRMReverse protection for power input t ..
15MQ040NTRPBF ,SCHOTTKY RECTIFIERApplicationsFSwitching power suppliesMeter protectionV 40 VRRMReverse protection for power input t ..
15MQ040NTRPBF ,SCHOTTKY RECTIFIERFeaturesT range - 40 to 150 °CJSurface mountableExtremely low forward voltageImproved reverse block ..
15MQ040TR ,40V 1.7A Schottky Discrete Diode in a SMA packageApplicationsF(AV)Switching power supplies@ 180° Sinusoidal 1.5 AMeter protectionReverse protection ..
15N06 , N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
1SS176 , SILICON EPITAXIAL PLANAR DIODE
1SS177 , HIGH SPEED SWITCHING DIODE
1SS181 ,SWITCHING DIODES1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mmUltra High Speed Switching Appli ..
1SS184 ,SWITCHING DIODES1SS184 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Unit: mmUltra High Speed Switching Appli ..
1SS187 ,Signal-Switching Diode1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mmUltra High Speed Switching Appli ..
1SS187 ,Signal-Switching Diode1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mmUltra High Speed Switching Appli ..
15MQ040N-15MQ040NTR
40V 2.1A Schottky Discrete Diode in a SMA package
International
ISER Rectifier
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics 1 5MQ040N Units
' DC 3 A
VRRM 40 V
|FSM @tp=5pssine 330 A
vF @2Apk, T J=125°C 0.43 v
T: range -40to150 "C
Bulletin PD-20517 rev.G 03/03
15MQO4ON
Descriptionl Features
The 15MQ040N Schottky rectifer is designed to be used for
low-power applications where a reverse voltage of 40 volts is
ancountered and surface mountable is required.
Applications
. Switching power supplies
. Meter protection
. Reverse protection for power input to PC board circuits
. Battery isolation and charging
. Low threshold voltage diode
o Free-wheeling or by-pass diode
. Low voltage clamp
Features
. Surface mountable
. Extremely low forward voltage
. Improved reverse blocking voltage capability relative
to other similar size Schottky
. Compact size
Device Marking: IR3F
CATHODE ANODE
1.40 (.055):[ J 2_50 (.098) I Ci) @ ,
1_60(.062) 290(114)
400(157) (D POLARITY (Ci) PART NUMBER
4.60 (A81)
2.10 MAX.
.152 (.000) (.085 MAX.)
_ 205 (.012) 1.47 MIN.
fir (.058 MIN.)
2.00(.078) -
o 76 ( t,1,,,":,,u'i')rrcir-tau-.r-tc-r"j-e,::,s (O04) J; l m
_ _ .203 (.008) 1.27 MIN.
1.52 (.060) 4.30 (_188) (.050 MIN.) ' k-
5.28 (Q08) 5 53 ( 218)
Outline SMA Similar to D-64
SOLDERING PAD
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
International
15MQO40N
Bulletin PD-20517 rev. G 03103 IEZR Rectifier
Voltage Ratings
Part number 15MQ040N
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 40
Absolute Maximum Ratings
Parameters 15MQ Units Conditions
IHAV) Max. Average Forward Current 2.1 A 50% duty cycle @ TL = 105 °C, rectangularwave form.
* See Fig. 4 On PC board 9mrr12island(.013mmthickcopperpad area)
lFSM Max. Peak One Cycle Non-Repetitive 330 5ps Sine or 3ps Rect. pulse Following f.ny rated
A load condition and
Surge Current * See Fig. 6 140 10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAS Non-Repetitive Avalanche Energy 6.0 mJ T, = 25 "C, IAS = 1A, L= 12mH
|AR Repetitive Avalanche Current 1.0 A
Electrical Specifications
Parameters 15MQ Units Conditions
VFM Max. Forward Voltage Drop (1) 0.42 V @ IA T, = 25 ''C
* See Fig. 1 0.49 V @ 2A
0.34 V @ IA T, =125 ''C
0.43 V @ 2A
IRM Max. Reverse Leakage Current (1) 0.5 mA TJ = 25 "C VR = rated VR
* See Fig. 2 20 mA Tu = 125 ''C
VF(TO) Threshold Voltage 0.26 V T J = T J max.
r, Forward Slope Resistance 64.6 mn
c, Typical Junction Capacitance 134 pF VR = ION/oc, TJ = 25°C, test signal = 1Mhz
LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated VR)
(1) Pulse 1Mdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 15MQ Units Conditions
T J Max.Junction Temperature Range (*) -40to 150 "C
Tsig Max. Storage Temperature Range -40 to 150 ''C
RthJA Max. Thermal Resistance Junction 80 °C/W DC operation
to Ambient
wt Approximate Weight 0.07(0.002) g(oz.)
Case Style SMA Similar D-64
Device Marking IR3F
(*) dPtot < 1 th I diti f di d it h t . k
dT] Rth(j-a) erma runaway con I Ion era 10 e onl S own ea sm
