Partno |
Mfg |
Dc |
Qty |
Available | Descript |
137E98460 |
FUJITSU|Fujitsu Microelectronics |
N/a |
800 |
|
|
137E98460 |
FUJI |
N/a |
800 |
|
|
13844 , Statshield Moisture Barrier Bags Application Instructions
13844 , Statshield Moisture Barrier Bags Application Instructions
13844 , Statshield Moisture Barrier Bags Application Instructions
13844 , Statshield Moisture Barrier Bags Application Instructions
13NM60N , N-channel 600 V, 0.320 Ω, 10 A PowerFLAT™ (8x8) HV MDmesh™ II Power MOSFET
1N5356B ,5 Watt Surmetic 40 Silicon Zener Diodes
1N5356B ,5 Watt Surmetic 40 Silicon Zener DiodesMAXIMUM RATINGSRating Symbol Value UnitL = Assembly LocationMax. Steady State Power Dissipation P 5 ..
1N5357B ,5 Watt Surmetic 40 Silicon Zener Diodeselectrical characteristics table. The test current time duration for each V measurement is 40 ±10 m ..