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12CTQ035IRN/a350avai35V 12A Schottky Common Cathode Diode in a TO-220AB package
12CTQ035SIRN/a16050avai35V 12A Schottky Common Cathode Diode in a D2-Pak package
12CTQ040 |12CTQ040IR N/a3630avai40V 12A Schottky Common Cathode Diode in a TO-220AB package
12CTQ040. |12CTQ040IRN/a2avai40V 12A Schottky Common Cathode Diode in a TO-220AB package
12CTQ045IRN/a32600avai45V 12A Schottky Common Cathode Diode in a TO-220AB package
12CTQ045STRLIRN/a800avai45V 12A Schottky Common Cathode Diode in a D2-Pak package
12CTQ045STRRIRN/a800avai45V 12A Schottky Common Cathode Diode in a D2-Pak package


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12CTQ035-12CTQ035S-12CTQ040 -12CTQ040.-12CTQ045-12CTQ045STRL-12CTQ045STRR
35V 12A Schottky Common Cathode Diode in a TO-220AB package
International
ISZR Rectifier
Bulletin PD-20554 rev.B 07/01
12CTQ...
12CTQ...S
12CTCL. -1
SCHOTTKYRECTFIER
Major Ratings and Characteristics
|F(AV) = 12Amp
VR = 35 to 45V
Description) Features
. . . The 12CTQ center tap Schottky rectifier series has been
Characteristics 12CTQ Units optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation up
IRAN) Rectangular 12 A to 175'' C junction temperature. Typical applications are in
waveform switching power supplies, converters, free-wheeling diodes,
and reverse battery protection.
VRRM range 35to 45 V . 175° C TJ operation
. . Center tap TO-220 package
I t =5 ss ne 690 A
FSM @ p p I . Low forward voltage drop
- o . High purity, high temperature epoxy encapsulation for
VF @6Apk,To=125 C 0.53 V enhanced mechanical strength and moisture resistance
(per leg) . High frequency operation
T range -55to175 ac o Guard ring for enhanced ruggedness and long term
J reliability
Case Styles
12CTQ... S 12CTQ... -1
Base Base Base
Common Common Common
Cathode Cathode Cathode
OZ 2 2
i O 2 j, 2 [2
1 Common 3 1 Common 3 1 Common 3
Anode Cathode Anode Anode Camode Anode Anode Cathode Anode
TO-220 D2PAK TO-262

12CTQ... Series
International
Bulletin PD-20554 rev. B 07/01 IEER Rectifier
Voltage Ratings
Part number 12CT0035 12CTQ040 12CTQ045
VR Max. DC Reverse Voltage (V)
. 35 40 45
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters 12CTQ Units Conditions
IHAV) Max. Average Forward (Per Leg) 6 A 50% duty cycle @ TC = 160°C, rectangularwave form
Current *See Fig. 5 (Per Device) 12
- . . . Followin an rated
IFSM Max.PeakOneCycIe Non Repetitive 690 A Sus Sineor3ps Rect. pulse Ioa d ,1lllll'yt'it%r.flntfi, with
Surge Current (Per Leg) * See Fig. 7 140 10ms Sine or 6ms Rect. pulse rated VRRM applied
EAS Non-RepetitiveAvalanche Energy 8 md TJ = 25°C, IAS=1.20Amps,L=11.10mH
(Per Leg)
I AR RepetitiveAvalancheCurrent 1.20 A Currentdecayinglinearlytozeroin1 psec
(Per Leg) Frequencylimited byTJ max.VA=1.5xVR typical
Electrical Specifications
Parameters 12CTQ Units Conditions
Vo, Max. Forward Voltage Drop 0.60 V @ 6A TJ = 25 ac
(Per Leg) * See Fig. 1 (1) 0.73 V @ 12A
0.53 V @ 6A T =125 ''C
0.64 v @ 12A J -
|RM Max. Reverse Leakage Current 0.8 mA T J = 25 "C
. o VR = rated VR
(Per Leg) * See Fig. 2 (1) 7.0 mA T: = 125 C
VFW) Threshold Voltage 0.35 V T J = T J max.
rt Forward Slope Resistance 18.23 mn
c, Max. Junction Capacitance (Per Leg) 400 pF VR = SVDC, (test signal range 100Khz to 1Mhz) 25''C
Ls Typical Series Inductance (Per Leg) 8.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10,000 V/ us
(Rated VR)
. . . (1) Pulse VWdth < 300ps, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters 12CTQ Units Conditions
T J Max.Junction Temperature Range -55to 175 "C
Ts.g Max.StorageTempera1ure Range -55to175 "C
Rma: Max.Thermal ResistanceJunction 3.50 "CA/V DCoperation *See Fig.4
to Case (Per Leg)
Rch Max.ThermalResistanceJunction 1.75 "CAN DC operation
to Case (Per Package)
Rmcs TypicalThermalResistance,Case 0.50 °C/W Mounting surface,smooth andgreased
to Heatsink
wt ApproximateWeight 2 (0.07) g (oz.)
T MountingTorque Min. 6 (5) Kg-cm
Max. 12(10) (Ibf-in)
2
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