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125NQ015IRN/a35avai15V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
125NQ015RIRN/a109avai15V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package


125NQ015R ,15V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak packageFeaturesThe 125NQ015(R) high current Schottky rectifier module hasbeen optimized for ultra low forw ..
129NQ135 ,135V 120A Schottky Discrete Diode in a D-67 HALF-Pak packageapplications are in switching power supplies, converters, free-waveformwheeling diodes, and reverse ..
12A01C ,Pico-TR SeriesFeatures• 0.40.16Large current capacitance.3•Low collector-to-emitter saturation voltage (resistanc ..
12A01C ,Pico-TR SeriesAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
12A01S ,Pico-TR SeriesAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
12A01S ,Pico-TR SeriesFeatures [12A01S]•Large current capacitance.0.750.3• 0.6Low collector-to-emitter saturation voltage ..
1FWJ43N ,SCHOTTKY BARRIER RECTIFIERAPPLICATIONS Low Forward Voltage : V = 0.37V (Max) FMAverage Forward Current : I = 1.0A F ( ..
1G4B42 ,RECTIFIER STACK (SINGLE PHASE BRIDGE RECTIFIER APPLICATIONS)TOSHIBA 1B4B42,1G4B42,1J4B42"""' """'SINGLE PHASE BRIDGE RECTIFIER
1GH46 ,FAST RECOVERY RECTIFIERAPPLICATIONS Repetitive Peak Reverse Voltage : V = 400V RRMAverage Forward Current : I = 1 ..
1GU42 ,RECTIFIER SILICON DIFFUSED TYPE HIGH SPEED RECTIFIER APPLICATIONS (FAST RECOVERY)APPLICATIONS (FAST RECOVERY) Average Forward Current : I = 1.0A F (AV) Repetitive Peak Rever ..
1GWJ43 ,SCHOTTKY BARRIER RECTIFIER HIGH SPEED RECTIFIER APPLICATIONS1GWJ43 TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE 1GWJ43 Unit: mmHIGH SPEED RECTIFI ..
1GWJ43 ,SCHOTTKY BARRIER RECTIFIER HIGH SPEED RECTIFIER APPLICATIONSAPPLICATIONS Average Forward Current : I = 1.0A F (AV) Reverse Recovery Time : t = 35ns (Ma ..


125NQ015-125NQ015R
15V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
Bulletin PD-2.275 rev.B 02/01
International
€212 Rectifier 125NQO15 (R)
SCHOTTKY RECTIFIER 120 Amp
Major Ratings and Characteristics Description/Features
The 125NQO15(R) high current Schottky rectifier module has
Characteristics 126Nt2016(R) U nits been op1imized forultra 1owforwar1voltyedrop s.ptclTc.ally.for
the OR-ing of parallel power supplies. The proprietary barrier
I Rectangular 120 A technology allows-for rellahle eperatlon 0p to 125 C )qnct1on
F(AV) temperature. Typical applications are In parallel switching
waveform power supplies, converters, reverse battery protection, and
VRRM 15 V redundantpowersubsystems.
. 125°C TJ operation (VR < 5V)
G, @tp=5ps sine 10,800 A . Unique highpower, Half-Pakmodule
. Optimized for OR-ing applications
VF @120Apk,TJ=75°C 0.33 V o Ultralowforward voltage drop
. Highfrequencyoperation
To range -55to125 DC . Guard ring forenhanced ruggedness and long term
reliability
o High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
30. 40 3th40_(1"9T 197)
1/4-20 UNC-2B 29. 90 (1. 177) Mr 125NQ015
i 19. 69 '69(_th77S, 775) Lug TerminaIAnode
18.42 (0. 725)
4.11 (0.162) I
3.86 (0-152) IA L Base Cathode
12. 83 2a3(_th505 505)D
A. 4.11 (_o. 1152)D
12.57 (0.495)D
3.86 (0.152)D
125NQO1SR
- +1M) Lug Terminal Cathode
18.92 (0.745)
13.97 (0.550) I I , 15A1 (0.595) Base Anode
13.72 (0.540) . ... "m 14.61 (0.575)
4 I I 1
2 54 0.100 Outline D-67 HALF PAK Module
39m2(_ldiii0) 2.54(_0.100) Dimensions in millimeters and (inches)
38.61 (1.520) 2.29 (0.090)
1
International
125N Q01 5(R)
Bulletin PD-2.275 rev. B 02/01 IEER Rectifier
Voltage Ratings
Part number 125NQ015(R)
VR Max. DC Reverse Voltage (V) 15
VRVW1 Max. Working Peak Reverse Voltage (V) 25
Absolute Maximum Ratings
Parameters 125NQ Units Conditions
[F(AV) Max.AverageFonNardCurrent 120 A 50%dutycycle@TC=71°C,rectangularwaveform
*See Fig. 5
G, Max. .'t.alfl.llefj,rft'loRepetitive 10,800 A Sus Sin.e or3ps Rect. pulse Eggogiggizgx 'Jef..
SurgeCurrent SeeFig.7 1700 10msSineor6ms Rect. pulse withrated VRRMapplIed
EAS Non-RepetitiveAvalancheEnergy 9 mJ TJ=25“C, IAS=2Amps, L=4.5mH
I AR RepetitiveAvalancheCurrent 2 A Currentdecayinglinearlytozeroin1usec
Frequencylimited by T, max. VA= 3 xVR typical
Electrical SpeaTcations
Parameters 125NQ Units Conditions
. 0.39 V 120A
Va, Max Forward Voltage Drop (1) @ T, = 25 "C
* See Fig. 1 0.52 V @ 240A
0.33 V @120A To-- 75°C
0.45 V @ 240A
Im, Max. Reverse Leakage Current(1) 40 mA T, = 25 "C
. VR = rated VR
* See Fig. 2 2000 mA T, = 100 'C
1780 mA To" 100''C VR=12V
1080 mA TJ = 100 "C v,, = 5V
c, Max. Junction Capacitance 7700 pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 "C
LS Typical Series Inductance 7.0 nH From top of terminal hole to mounting plane
dv/dt Max.Voltage Rate of Change 10,000 VI us
(Rated VR)
Thermal-Mechanical Specifications (1) Pulse Ndth < 300ps, Duty Cycle < 2 'fo
Parameters 125NQ Units Conditions
T, Max.JunctionTemperatureRange -55to125 "C
stg Max.StorageTemperature Range -55to150 "C
Rch Max.ThermaIResistanceJunction 0.40 °C/W DCoperation *See Fig.4
toCase
Rmcs TypicalThermalResistance,Caseto 0.15 °C/W Mountingsurface,smoothandgreased
Heatsink
wt ApproximateWeight 25.6(0.9) g(oz.)
T MountingTorque Min. 40(35) Non-lubricatedthreads
Max. 58(50) Kg-cm
TenninalTorque Min. 58(50) (Ibf-in)
Max. 86(75)
Case Style HALF PAK Module

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